On Vertical Integration Framework Element of Transistor-Transistor Logic

Ultrathin silicon-on-insulator vertical tunneling transistor

We have fabricated silicon-on-insulator ~SOI! transistors with an ultrathin Si channel of ;5 nm, tunneling gate oxide of ;1 nm, and 100 nm gate length. In addition to good transistor characteristics, these same devices exhibit additional functionality at low temperature. The drain current ID exhibits steps near the turn-on threshold voltage as a function of the backgate VBG bias on the substrat...

Vertical Nanowire Transistor in Flexible Polymer Foil

Vertical graphene-base hot-electron transistor.

We demonstrate vertical graphene-base hot-electron transistors (GB-HETs) with a variety of structures and material parameters. Our GB-HETs exhibit a current saturation with a high current on-off ratio (>10(5)), which results from both the vertical transport of hot electrons across the ultrathin graphene base and the filtering of hot electrons through a built-in energy barrier. The influences of...

Scaling Beyond Moore: Single Electron Transistor and Single Atom Transistor Integration on CMOS

Continuous scaling of MOSFET dimensions has led us to the era of nanoelectronics. Multigate FET (MuGFET) architecture with ’nanowire channel’ is being considered as one feasible enabler of MOSFET scaling to end-ofroadmap. Alongside classical CMOS or Moore’s law scaling, many novel device proposals exploiting nanoscale phenomena have been made either. Single Electron Transistor (SET), with its u...

On the Theory of the Thermionic Emission Transistor Ii. Tet as an Element of Logic Circuits

Ah&ret-The theory of the Thermionic Emission Transistor proposed by us earlier is further developed. It is shown that the structure can be significantly simplified with only a marginal loss in its performance. The simplification consists in eliminating the need for a built-in planar doped triangular potential barrier. The current-voltage characteristics, the voltage gain, and the transconductan...